PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STB80NF55-06-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.4nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB80NF55-06-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB80NF55-06-1 to view detailed technical specifications.
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