N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 6.5mΩ drain-source on-resistance and a maximum power dissipation of 300W. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with a turn-on delay of 27ns and fall time of 65ns. The component is housed in a D2PAK package and is RoHS compliant.
PackageD2PAK
Current Rating80A
MountingSurface Mount, Through Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB80NF55-06T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
6.5mR
Dual Supply Voltage
55V
Fall Time
65ns
Gate to Source Voltage (Vgs)
20V
Height
9.35mm
Input Capacitance
4.4nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount, Through Hole
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
6.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
125ns
Turn-On Delay Time
27ns
DC Rated Voltage
55V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB80NF55-06T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB80NF55-06T4 to view detailed technical specifications.
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