
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 8mΩ maximum drain-source on-resistance and 300W power dissipation. Operating across a -55°C to 175°C temperature range, it includes a 3V threshold voltage and 3.85nF input capacitance. Packaged in a D2PAK for efficient thermal management, this RoHS compliant component is ideal for high-current switching applications.
Stmicroelectronics STB80NF55-08T4 technical specifications.
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