N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 8mΩ maximum drain-source on-resistance and 300W power dissipation. Operating across a -55°C to 175°C temperature range, it includes a 3V threshold voltage and 3.85nF input capacitance. Packaged in a D2PAK for efficient thermal management, this RoHS compliant component is ideal for high-current switching applications.
PackageD2PAK
Current Rating80A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB80NF55-08T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
8mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
3.85nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
75ns
Turn-On Delay Time
20ns
DC Rated Voltage
55V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB80NF55-08T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB80NF55-08T4 to view detailed technical specifications.
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