N-channel power MOSFET featuring 40V drain-source breakdown voltage and a low 5.0 mOhm drain-source on-resistance. This surface-mount device offers a continuous drain current of 80A and a maximum power dissipation of 110W. Designed with a D2PAK package, it exhibits fast switching characteristics with turn-on delay time of 15ns and fall time of 15ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is ideal for high-power switching applications.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB95N4F3 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 5MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB95N4F3 Datasheet
Download the complete datasheet for Stmicroelectronics STB95N4F3 to view detailed technical specifications.
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