N-channel power MOSFET featuring 40V drain-source breakdown voltage and a low 5.0 mOhm drain-source on-resistance. This surface-mount device offers a continuous drain current of 80A and a maximum power dissipation of 110W. Designed with a D2PAK package, it exhibits fast switching characteristics with turn-on delay time of 15ns and fall time of 15ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is ideal for high-power switching applications.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB95N4F3 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
5.8mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
5MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.2nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
5.8mR
RoHS Compliant
Yes
Series
STripFET™ III
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB95N4F3 Datasheet
Download the complete datasheet for Stmicroelectronics STB95N4F3 to view detailed technical specifications.
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