N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 7.2A continuous drain current. This SuperMESH™ device offers a low 0.72 Ohm drain-source resistance at 500V and a maximum power dissipation of 110W. Designed for surface mounting in a D2PAK package, it includes integrated Zener protection and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 22ns fall time.
PackageD2PAK
Current Rating7.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB9NK50ZT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
7.2A
Current Rating
7.2A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
910pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
45ns
Turn-On Delay Time
17ns
DC Rated Voltage
500V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB9NK50ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK50ZT4 to view detailed technical specifications.
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