N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. This surface-mount device offers a maximum on-state resistance of 950mΩ at a nominal Vgs of 3.5V. With a 125W power dissipation and D2PAK package, it boasts fast switching characteristics including a 15ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for demanding power applications.
PackageD2PAK
Current Rating7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB9NK60ZDT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
950MR
Dual Supply Voltage
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
1.11nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Nominal Vgs
3.5V
Number of Elements
1
On-State Resistance
950mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperFREDmesh™
Termination
SMD/SMT
Turn-Off Delay Time
42ns
Turn-On Delay Time
22ns
DC Rated Voltage
600V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB9NK60ZDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK60ZDT4 to view detailed technical specifications.
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