N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 7A continuous drain current, and 950mΩ maximum drain-source on-resistance. Features Zener protection, 125W power dissipation, and a D2PAK surface-mount package. Operates from -55°C to 150°C with a 3.75V threshold voltage. Includes fast switching characteristics with 19ns turn-on delay and 15ns fall time. RoHS compliant.
PackageD2PAK
Current Rating7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB9NK60ZT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
950mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
1.11nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
43ns
Turn-On Delay Time
19ns
DC Rated Voltage
600V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB9NK60ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK60ZT4 to view detailed technical specifications.
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