The STB9NK70ZT4 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 700V and a continuous drain current of 7.5A. The device is packaged in a D2PAK case and is lead-free and RoHS compliant. It has a maximum power dissipation of 115W and a gate to source voltage of 30V.
PackageD2PAK
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB9NK70ZT4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.37nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 700V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB9NK70ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK70ZT4 to view detailed technical specifications.
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