Automotive-grade N-channel SuperMESH™ Power MOSFET featuring 800V drain-to-source breakdown voltage and 1.5 Ohm typical drain-to-source resistance. This surface-mount device offers a continuous drain current of 5.2A and a maximum power dissipation of 125W. Designed for high-temperature operation up to 150°C, it is packaged in a D2PAK for efficient thermal management. Key switching characteristics include a 20ns turn-on delay and a 22ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STB9NK80Z technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.138nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
1.8R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
45ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB9NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK80Z to view detailed technical specifications.
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