The STBV32-AP is a bipolar junction transistor with a collector-emitter breakdown voltage of 400V and a maximum collector current of 1.5A. It is packaged in a TO-226-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 1.5W and operates within a temperature range of -65°C to 150°C. The STBV32-AP is RoHS compliant and is available in cut tape packaging.
PackageTO-226-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STBV32-AP technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 1.5V |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STBV32-AP Datasheet
Download the complete datasheet for Stmicroelectronics STBV32-AP to view detailed technical specifications.
No datasheet is available for this part.