N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers a low 8mΩ typical drain-source on-resistance. Housed in a surface-mount DPAK package with a maximum power dissipation of 120W. Operates across a wide temperature range of -55°C to 175°C. Includes 4.369nF input capacitance and 4.5V threshold voltage.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power120W
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Technical Specifications
Stmicroelectronics STD100N10F7 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 4.369nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 27ns |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD100N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STD100N10F7 to view detailed technical specifications.
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