N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers low 4.5mΩ typical drain-source on-resistance and 110W maximum power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching speeds with a 9ns turn-on delay and 35ns fall time. Operating across a wide temperature range of -55°C to 175°C, it is lead-free and RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STD100N3LF3 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.5mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.06nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD100N3LF3 Datasheet
Download the complete datasheet for Stmicroelectronics STD100N3LF3 to view detailed technical specifications.
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