N-channel power MOSFET featuring 500V drain-source voltage and 7A continuous drain current. Surface mount DPAK package with 630mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with 70W maximum power dissipation. Includes 12ns fall time and 7.8ns turn-on/off delay times. ROHS compliant.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STD10NM50N technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 630mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.4mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 630mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 7.8ns |
| Turn-On Delay Time | 7.8ns |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD10NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STD10NM50N to view detailed technical specifications.
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