N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 9A continuous drain current. Offers a low 480mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component operates within a -55°C to 150°C temperature range and supports up to 85W power dissipation. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STD11N65M5 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 480MR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.4mm |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 23ns |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD11N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STD11N65M5 to view detailed technical specifications.
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