The STD127DT4 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 400V and a maximum collector current of 4A. It features a maximum power dissipation of 35W and operates within a temperature range of -65°C to 150°C. The transistor is packaged in a DPAK-3/2 package and is RoHS compliant.
Stmicroelectronics STD127DT4 technical specifications.
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector-emitter Voltage-Max | 1.3V |
| Continuous Collector Current | 4A |
| Emitter Base Voltage (VEBO) | 18V |
| hFE Min | 5 |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 0.012346oz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD127DT4 to view detailed technical specifications.
No datasheet is available for this part.