N-channel power MOSFET, DPAK package, featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. Offers a low 430mΩ maximum drain-source on-resistance. Operates with a 4V threshold voltage and 25V gate-source voltage. Includes fast switching characteristics with turn-on delay of 22.6ns and fall time of 24ns. Maximum power dissipation is 70W.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD12N65M5 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
430mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
430mR
Fall Time
24ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
430mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
15.6ns
Turn-On Delay Time
22.6ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD12N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STD12N65M5 to view detailed technical specifications.
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