N-Channel POWER MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This surface-mount device offers a low 100mΩ maximum drain-source on-resistance. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 30W. The DPAK package facilitates efficient heat management.
PackageDPAK
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD12NF06T4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
315pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
3V
Turn-Off Delay Time
17ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD12NF06T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD12NF06T4 to view detailed technical specifications.
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