N-channel Power MOSFET featuring 600 V drain-source voltage and a low 0.310 Ohm typical on-resistance. Delivers 11 A continuous drain current, optimized for efficient power switching. Encased in a compact DPAK package for space-constrained applications.
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Technical Specifications
Stmicroelectronics STD13N60DM2 technical specifications.
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics STD13N60DM2 Datasheet
Download the complete datasheet for Stmicroelectronics STD13N60DM2 to view detailed technical specifications.
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