N-channel power MOSFET featuring 24V drain-source breakdown voltage and a maximum continuous drain current of 150A. Offers a low 3.5mΩ drain-source on-resistance. Designed for surface mounting in a TO-252-3 package, this component supports a maximum power dissipation of 125W and operates within a temperature range of -55°C to 175°C. RoHS compliant and lead-free.
Stmicroelectronics STD150NH02LT4 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 150A |
| Current Rating | 150A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 24V |
| Drain-source On Resistance-Max | 3.5mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 3.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 69ns |
| DC Rated Voltage | 24V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD150NH02LT4 to view detailed technical specifications.
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