The STD1NB60-1 is a 600V N-CHANNEL MOSFET with a continuous drain current of 1A and a power dissipation of 45W. It has a drain to source breakdown voltage of 600V and a drain to source resistance of 8.5 ohms. The device operates over a temperature range of -65°C to 150°C and is available in a rail/Tube packaging quantity of 3000. The STD1NB60-1 is not RoHS compliant.
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD1NB60-1 technical specifications.
General
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 8.5R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STD1NB60-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD1NB60-1 to view detailed technical specifications.
No datasheet is available for this part.