N-channel SuperMESH Power MOSFET featuring 600V drain-to-source breakdown voltage and 1A continuous drain current. Offers 8 Ohm typical drain-to-source resistance with a maximum of 8.5 Ohm. Operates within a -55°C to 150°C temperature range and supports through-hole and surface mount configurations. IPA K package with 30W maximum power dissipation.
PackageTO-251-3
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Stmicroelectronics STD1NK60-1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.4mm |
| Input Capacitance | 156pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 8.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 6.5ns |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD1NK60-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD1NK60-1 to view detailed technical specifications.
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