N-channel power MOSFET featuring 100V drain-source breakdown voltage and 25A continuous drain current. This surface-mount device offers a low 35mΩ typical on-resistance and a maximum power dissipation of 40W. Designed with a DPAK package, it boasts fast switching characteristics with turn-on delay time of 9.8ns and fall time of 4.6ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is ideal for demanding applications.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD25N10F7 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 14.8ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.139332oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD25N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STD25N10F7 to view detailed technical specifications.
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