Automotive-grade N-channel power MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. Offers a low 0.10 Ohm typical drain-source resistance, with a maximum of 0.125 Ohm. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 110W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 10ns fall time, with input capacitance at 940pF.
Stmicroelectronics STD25NF20 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD25NF20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
