
N-channel Power MOSFET, TO-252 package, featuring 30V drain-source breakdown voltage and 27A continuous drain current. Offers a low 19mΩ maximum drain-source on-resistance. Operates with a 22V gate-source voltage, exhibiting a 4ns turn-on delay and 2.8ns fall time. This RoHS compliant component supports surface mounting with a maximum power dissipation of 30W and an operating temperature range of -55°C to 175°C.
Stmicroelectronics STD27N3LH5 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19mR |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 475pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 4ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD27N3LH5 to view detailed technical specifications.
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