
PNP Bipolar Junction Transistor (BJT) for power applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 5A. Operates with a 15W power dissipation and a transition frequency of 150MHz. Packaged in a DPAK surface-mount case, this RoHS compliant component offers a minimum hFE of 200 and a maximum operating temperature of 150°C.
Stmicroelectronics STD2805T4 technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Current | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD2805T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
