Stmicroelectronics
STD2NK70Z-1
1.6A, 700V, 7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD2NK70Z-1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 7R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD2NK70Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD2NK70Z-1 to view detailed technical specifications.
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