P-CHANNEL Power MOSFET featuring 30V drain-source breakdown voltage and 24A continuous drain current. Offers low on-resistance with a maximum of 28mΩ at a nominal Vgs of 1V. Designed for surface mounting in a TO-252 package, this component boasts a maximum power dissipation of 70W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay of 64ns and a fall time of 26ns.
PackageTO-252
Current Rating-24A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STD30PF03LT4 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
24A
Current Rating
-24A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
28mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
16V
Height
2.4mm
Input Capacitance
1.67nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
-1V
Turn-Off Delay Time
36ns
Turn-On Delay Time
64ns
DC Rated Voltage
-30V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD30PF03LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD30PF03LT4 to view detailed technical specifications.
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