Automotive N-channel enhancement mode Power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features a maximum drain-source voltage of 30V and a continuous drain current of 35A. Offers a low drain-source on-resistance of 16mΩ at 10V gate-source voltage. Designed for high-temperature operation with a maximum operating temperature of 175°C. Package dimensions include a maximum length of 6.6mm and width of 6.2mm.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STD35N3LH5 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
35A
Maximum Drain Source Resistance
16@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
Maximum Power Dissipation
35000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STD35N3LH5 Datasheet
Download the complete datasheet for Stmicroelectronics STD35N3LH5 to view detailed technical specifications.
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