N-Channel Power MOSFET in a DPAK surface-mount package. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 35A. Offers a low drain-source on-resistance of 19.5mΩ at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 50W. RoHS compliant and supplied on tape and reel.
PackageDPAK
Current Rating35A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD35NF3LLT4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
35A
Current Rating
35A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
19.5mR
Dual Supply Voltage
30V
Fall Time
21ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
800pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
19.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
2.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
17ns
DC Rated Voltage
30V
Width
6.8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD35NF3LLT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD35NF3LLT4 to view detailed technical specifications.
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