Stmicroelectronics
STD3NB50T4
3A, 500V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
PackageTO-252
PolarityN-CHANNEL
Power50W
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Technical Specifications
Stmicroelectronics STD3NB50T4 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.8R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STD3NB50T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD3NB50T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.