N-channel MOSFET featuring 25V drain-source breakdown voltage and 40A continuous drain current. Surface mount DPAK package with 11.8mR maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 175°C, with 35W maximum power dissipation. Includes fast switching characteristics with a 3.5ns fall time and 4.8ns turn-on delay.
Stmicroelectronics STD40N2LH5 technical specifications.
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