N-channel power MOSFET featuring 100V drain-source breakdown voltage and 50A continuous drain current. This surface-mount device offers a low 28mΩ maximum drain-source on-resistance. Operating across a wide temperature range from -55°C to 175°C, it supports 125W maximum power dissipation. The DPAK package facilitates efficient heat management.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STD40NF10 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
28mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
2.18nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
54ns
Turn-On Delay Time
21ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD40NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STD40NF10 to view detailed technical specifications.
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