N-channel STripFET™ power MOSFET featuring 30V drain-source breakdown voltage and 40A continuous drain current. Offers low 11.5mΩ drain-to-source resistance at VGS=10V, 5A. Designed for surface mounting in a TO-252-3 package, this component boasts low gate charge for fast switching with turn-on delay of 23ns and fall time of 28ns. Maximum power dissipation is 80W, with an operating temperature range of -55°C to 175°C. RoHS compliant and lead-free.
Stmicroelectronics STD40NF3LLT4 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.65nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD40NF3LLT4 to view detailed technical specifications.
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