N-channel power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. This surface-mount device in a DPAK package offers a low 0.013 Ohm typical drain-source on-resistance. Key specifications include a maximum power dissipation of 60W and an operating temperature range of -55°C to 175°C. It boasts fast switching characteristics with an 8ns fall time, 15ns turn-on delay, and 24ns turn-off delay. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STD45N10F7 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
45A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
100V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
1.64nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
24ns
Turn-On Delay Time
15ns
Weight
0.139332oz
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD45N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STD45N10F7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
