
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. This surface-mount device in a DPAK package offers a low 0.013 Ohm typical drain-source on-resistance. Key specifications include a maximum power dissipation of 60W and an operating temperature range of -55°C to 175°C. It boasts fast switching characteristics with an 8ns fall time, 15ns turn-on delay, and 24ns turn-off delay. RoHS compliant and lead-free.
Stmicroelectronics STD45N10F7 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 1.64nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.139332oz |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD45N10F7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
