N-Channel MOSFET featuring 75V drain-source breakdown voltage and 40A continuous drain current. Offers low 18mΩ drain-to-source resistance at a nominal 4V gate-source voltage. Designed for surface mounting in a TO-252 package, this component boasts a maximum power dissipation of 125W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 55ns turn-off delay.
PackageTO-252
Current Rating40A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD45NF75T4 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
75V
Dual Supply Voltage
75V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
1.76nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
15ns
DC Rated Voltage
75V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD45NF75T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD45NF75T4 to view detailed technical specifications.
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