N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features a maximum drain-source voltage of 525V and a continuous drain current of 2.5A. Utilizes SuperMESH 3 process technology with a maximum drain-source on-resistance of 2600 mOhm at 10V. The DPAK package offers a gull-wing lead shape and a tab for enhanced thermal performance.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STD4N52K3 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH 3
Maximum Drain Source Voltage
525V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2.5A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
2600@10VmOhm
Typical Gate Charge @ Vgs
11@10VnC
Typical Gate Charge @ 10V
11nC
Typical Input Capacitance @ Vds
334@100VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STD4N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STD4N52K3 to view detailed technical specifications.
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