N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. Offers a typical 2.1 Ohm drain-source on-resistance, with a maximum of 2.5 Ohm. Designed for surface mounting in a DPAK package, this component boasts a 60W power dissipation and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 16.5ns turn-on delay and a 21ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STD4N80K5 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
2.1R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
2.5R
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
175pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
2.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
36ns
Turn-On Delay Time
16.5ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STD4N80K5 to view detailed technical specifications.
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