N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. This surface-mount component offers a low 2.7 Ohm drain-source on-resistance. Designed for efficient switching, it exhibits typical turn-on delay of 9.5ns and fall time of 22ns. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 45W.
PackageDPAK
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STD4NK50ZD technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
2.7R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
2.7R
Dual Supply Voltage
500V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
310pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
2.3V
On-State Resistance
2.7R
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Rds On Max
2.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
SMD/SMT
Turn-Off Delay Time
23ns
Turn-On Delay Time
9.5ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NK50ZD Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK50ZD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
