N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This component offers a low 2.7 Ohm drain-to-source resistance (Rds On Max) and a 3.5V nominal gate-to-source threshold voltage. Designed for through-hole mounting in a TO-251 package, it boasts a maximum power dissipation of 45W and fast switching characteristics with a 22ns fall time and 23ns turn-off delay. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is supplied in rail/tube packaging.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD4NK50ZD-1 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
2.7R
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
310pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Nominal Vgs
3.5V
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Rds On Max
2.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
Through Hole
Threshold Voltage
3.5V
Turn-Off Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NK50ZD-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK50ZD-1 to view detailed technical specifications.
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