N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. Surface mount DPAK package offers 2.4 Ohm drain-source on-resistance (max 2.7 Ohm). Operates from -55°C to 150°C with 45W power dissipation. Includes Zener protection and 30V gate-source voltage rating.
PackageDPAK
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STD4NK50ZT4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
2.4R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
2.7R
Dual Supply Voltage
500V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
310pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
2.3V
Number of Elements
1
On-State Resistance
2.7R
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
2.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
SMD/SMT
Threshold Voltage
3.75V
Turn-Off Delay Time
21ns
Turn-On Delay Time
10ns
DC Rated Voltage
500V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NK50ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK50ZT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
