N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and a maximum continuous drain current of 4A. This through-hole component offers a low drain-source on-resistance of 2 Ohms maximum and 1.7 Ohms typical. Designed for efficient switching, it exhibits turn-on delay time of 12ns and fall time of 16.5ns. Housed in a TO-251-3 IPAK package, it supports a maximum power dissipation of 70W and operates within a temperature range of -55°C to 150°C. This RoHS compliant and lead-free component is supplied in rail/tube packaging.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD4NK60Z-1 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
2R
Fall Time
16.5ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
510pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
29ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NK60Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK60Z-1 to view detailed technical specifications.
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