Stmicroelectronics
STD4NK80Z-1
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power80W
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Technical Specifications
Stmicroelectronics STD4NK80Z-1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 575pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD4NK80Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK80Z-1 to view detailed technical specifications.
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