N-CHANNEL SuperMESH™ Power MOSFET, 800V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 3.5 Ohm Max Drain-Source On-Resistance. Features include 80W Max Power Dissipation, 30V Gate-to-Source Voltage, and 3.75V Threshold Voltage. This surface mount DPAK package component offers 32ns Fall Time and 35ns Turn-Off Delay Time. RoHS compliant and Lead Free.
PackageDPAK
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD4NK80ZT4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
3.5R
Fall Time
32ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
575pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Radiation Hardening
No
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
35ns
Turn-On Delay Time
13ns
DC Rated Voltage
800V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NK80ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK80ZT4 to view detailed technical specifications.
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