N-channel power MOSFET with 250V drain-source breakdown voltage and 4A continuous drain current. Features 1.1 ohm maximum drain-source on-resistance and 50W maximum power dissipation. Packaged in a TO-252 (DPAK-3) surface-mount package. Operates from -65°C to 150°C with a 20V gate-source voltage rating. RoHS compliant.
PackageTO-252
Current Rating4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD4NS25T4 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
250V
Dual Supply Voltage
250V
Fall Time
10.5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
355pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
50W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
1.1R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MESH OVERLAY™
Threshold Voltage
3V
Turn-Off Delay Time
12ns
DC Rated Voltage
250V
Width
6.8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NS25T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NS25T4 to view detailed technical specifications.
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