N-channel power MOSFET featuring 24V drain-source breakdown voltage and 50A continuous drain current. Offers a low 10.5mΩ Rds On resistance for efficient power switching. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 60W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 16ns. RoHS compliant and lead-free.
Stmicroelectronics STD50NH02LT4 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 24V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 24V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD50NH02LT4 to view detailed technical specifications.
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