N-Channel Power MOSFET, DPAK package, featuring 40V Drain to Source Breakdown Voltage and 55A Continuous Drain Current. Offers a low 8.5mΩ Drain to Source On Resistance. Designed for surface mounting with a maximum power dissipation of 60W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 6ns fall time. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STD55N4F5 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 8.5MR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD55N4F5 Datasheet
Download the complete datasheet for Stmicroelectronics STD55N4F5 to view detailed technical specifications.
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