N-channel power MOSFET featuring 200V drain-source breakdown voltage and 5A continuous drain current. Offers low 650mΩ drain-source on-resistance at a nominal 2.5V gate-source voltage. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 33W and operates within a temperature range of -55°C to 150°C. RoHS compliant with fast switching characteristics including a 11.5ns turn-on delay.
PackageDPAK
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD5N20LT4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
650mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
700mR
Dual Supply Voltage
200V
Fall Time
15.5ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
242pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
33W
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
33W
Radiation Hardening
No
Rds On Max
700mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
2.5V
Turn-Off Delay Time
14ns
Turn-On Delay Time
11.5ns
DC Rated Voltage
200V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD5N20LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD5N20LT4 to view detailed technical specifications.
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