N-channel power MOSFET featuring 200V drain-source breakdown voltage and 5A continuous drain current. This surface-mount device offers a maximum drain-source on-resistance of 800mΩ at a nominal gate-source voltage of 3V. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 45W. The component is housed in a DPAK package with SMD/SMT termination.
PackageDPAK
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD5N20T4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Dual Supply Voltage
200V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MESH OVERLAY™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-On Delay Time
18ns
DC Rated Voltage
200V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD5N20T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD5N20T4 to view detailed technical specifications.
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