N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features a maximum drain-source voltage of 525V and a continuous drain current of 4.4A. Utilizes SuperMESH 3 process technology with a low drain-source on-resistance of 1500mΩ at 10V. Designed for efficient power switching with a maximum power dissipation of 70W and a typical gate charge of 17nC.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STD5N52K3 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH 3
Maximum Drain Source Voltage
525V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
4.4A
Maximum Drain Source Resistance
1500@10VmOhm
Typical Gate Charge @ Vgs
17@10VnC
Typical Gate Charge @ 10V
17nC
Typical Input Capacitance @ Vds
545@100VpF
Maximum Power Dissipation
70000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STD5N52K3 Datasheet
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