
UltraFASTmesh™ N-channel power MOSFET, 525V drain-source breakdown voltage, 4.4A continuous drain current, and 1.28 Ohm maximum drain-source on-resistance. Features a 15ns fall time and 23.1ns turn-off delay time. Packaged in a DPAK surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 70W.
Stmicroelectronics STD5N52U technical specifications.
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