UltraFASTmesh™ N-channel power MOSFET, 525V drain-source breakdown voltage, 4.4A continuous drain current, and 1.28 Ohm maximum drain-source on-resistance. Features a 15ns fall time and 23.1ns turn-off delay time. Packaged in a DPAK surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 70W.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD5N52U technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
4.4A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
1.28R
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
1.28R
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
529pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Nominal Vgs
3.75V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UltraFASTmesh™
Threshold Voltage
3.75V
Turn-Off Delay Time
23.1ns
Turn-On Delay Time
11.4ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD5N52U Datasheet
Download the complete datasheet for Stmicroelectronics STD5N52U to view detailed technical specifications.
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